BLF882_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – UHF power LDMOS transistor

BLF882; BLF882S
UHF power LDMOS transistor
Rev. 2 — 3 July 2015
Product data sheet
1. Product profile
1.1 General description
A 200 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The transistor can deliver 200 W in broadband applications from HF to
860 MHz. The excellent ruggedness and broadband performance of this device makes it
ideal for digital transmitter applications.
Table 1. Test information
RF performance at T_case = 25 C in a class-AB test circuit.
Test signal
f
V_DS P_L(AV)
(MHz)
(V) (W)
G_p
_D
(dB) (%)
RF performance in a class-AB 705 MHz narrowband test circuit
CW, class-AB
705
50 180
21 62
CW pulsed, class-AB
705
50 200
21 63
RF performance in a class-AB 470 MHz to 705 MHz broadband test circuit
DVB-T (8k OFDM)
470 to 705 50 33
20 28 to 31
PAR
(dB)
-
-
8.0 to 8.4 ^[1]
[1] PAR of output signal at 0.01% probability on CCDF; PAR of input signal = 9.5 dB at 0.01% probability on
CCDF.
1.2 Features and benefits
 Integrated ESD protection
 Excellent ruggedness
 High power gain
 High efficiency
 Excellent reliability
 Easy power control
 Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1.3 Applications
 Transmitter applications in the HF to 860 MHz frequency range
 Industrial applications in the HF to 860 MHz frequency range
 Broadcast transmitters