BLF881_15 Datasheet, PDF (1/18 Pages) NXP Semiconductors – UHF power LDMOS transistor

BLF881; BLF881S
UHF power LDMOS transistor
Rev. 3 — 7 December 2010
Product data sheet
1. Product profile
1.1 General description
A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent
ruggedness and broadband performance of this device makes it ideal for digital
transmitter applications.
Table 1. Typical performance
RF performance at V_DS = 50 V in a common-source 860 MHz test circuit.
Mode of operation f
P_L P_L(PEP) P_L(AV) G_p η_D IMD3 IMD_shldr
(MHz)
(W) (W) (W) (dB) (%) (dBc) (dBc)
2-tone, class AB
f₁ = 860; f₂ = 860.1 - 140
-
21 49 −34 -
DVB-T (8k OFDM) 858
--
33 21 34 -
−33^[1]
[1] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
„ 2-Tone performance at 860 MHz, a drain-source voltage V_DS of 50 V and a quiescent
drain current I_Dq = 0.5 A:
‹ Peak envelope power load power = 140 W
‹ Power gain = 21 dB
‹ Drain efficiency = 49 %
‹ Third order intermodulation distortion = −34 dBc
„ DVB performance at 858 MHz, a drain-source voltage V_DS of 50 V and a quiescent
drain current I_Dq = 0.5 A:
‹ Average output power = 33 W
‹ Power gain = 21 dB
‹ Drain efficiency = 34 %
‹ Shoulder distance = −33 dBc (4.3 MHz from center frequency)
„ Integrated ESD protection
„ Excellent ruggedness
„ High power gain