BLF7G27L-90P_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – Power LDMOS transistor

BLF7G27L-90P;
BLF7G27LS-90P
Power LDMOS transistor
Rev. 2 — 10 November 2011
Product data sheet
1. Product profile
1.1 General description
90 W LDMOS power transistor for base station applications at frequencies from
2500 MHz to 2700 MHz.
Table 1. Typical performance
Typical RF performance at T_case = 25 C in a common source class-AB production test circuit.
Mode of operation
f
I_Dq
V_DS P_L(AV) G_p _D ACPR_885k ACPR_5M
(MHz)
(mA) (V) (W) (dB) (%) (dBc)
(dBc)
IS-95
2500 to 2700 720 28 16
18.5 29 46^[1]
-
Single carrier W-CDMA 2500 to 2700 720 28 25
18.5 35 
36^[2]
[1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
[2] 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel bandwidth is
3.84 MHz.
1.2 Features and benefits
 Excellent ruggedness
 High efficiency
 Low R_th providing excellent thermal stability
 Designed for broadband operation (2500 MHz to 2700 MHz)
 Lower output capacitance for improved performance in Doherty applications
 Designed for low memory effects providing excellent pre-distortability
 Internally matched for ease of use
 Integrated ESD protection
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2500 MHz to 2700 MHz frequency range