BLF7G24L-160P_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – Power LDMOS transistor

BLF7G24L-160P;
BLF7G24LS-160P
Power LDMOS transistor
Rev. 5 — 12 July 2013
Product data sheet
1. Product profile
1.1 General description
160 W LDMOS power transistor for base station applications at frequencies from
2300 MHz to 2400 MHz.
Table 1. Typical performance
Typical RF performance at T_case = 25 C in a common source class-AB production test circuit.
Test signal
f
I_Dq
V_DS P_L(AV)
G_p
_D
ACPR_885k
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
IS-95
2300 to 2400
1200 28 30
18.5 27.5 45.5^[1]
[1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
1.2 Features and benefits
 Excellent ruggedness
 High efficiency
 Low R_th providing excellent thermal stability
 Designed for broadband operation (2300 MHz to 2400 MHz)
 Lower output capacitance for improved performance in Doherty applications
 Designed for low memory effects providing excellent pre-distortability
 Internally matched for ease of use
 Integrated ESD protection
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 RF power amplifiers for base stations and multi carrier applications in the 2300 MHz to
2400 MHz frequency range