BLF7G21LS-160_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – Power LDMOS transistor

BLF7G21LS-160
Power LDMOS transistor
Rev. 1 — 20 April 2012
Product data sheet
1. Product profile
1.1 General description
160 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2050 MHz.
Table 1. Typical performance
Typical RF performance at T_case = 25 °C in a common source class-AB production test circuit.
Mode of operation
f
I_Dq
V_DS P_L(AV) G_p
η_D ACPR
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
1930 to 1990 1080 28 45
18
34 −30 ^[1]
1-carrier W-CDMA
1930 to 1990 1080 28 50
18
36 −34 ^[2]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
[2] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
 Excellent ruggedness
 High efficiency
 Low R_th providing excellent thermal stability
 Designed for broadband operation (1800 MHz to 2050 MHz)
 Lower output capacitance for improved performance in Doherty applications
 Designed for low memory effects providing excellent pre-distortability
 Internally matched for ease of use
 Integrated ESD protection
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 RF power amplifiers for base stations and multi carrier applications in the 1800 MHz to
2050 MHz frequency range