BLF7G21L-160P_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – Power LDMOS transistor

BLF7G21L-160P;
BLF7G21LS-160P
Power LDMOS transistor
Rev. 3 — 10 February 2014
Product data sheet
1. Product profile
1.1 General description
160 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2050 MHz, also suitable for operation at 1495 MHz to 1511 MHz.
Table 1. Typical performance
Typical RF performance at T_case = 25 C in a common source class-AB production test circuit.
Mode of operation
f
I_Dq
V_DS P_L(AV) G_p
_D ACPR
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
1930 to 1990 1080 28 45
18
34 30 ^[1]
1-carrier W-CDMA
1930 to 1990 1080 28 50
18.0 36 34 ^[2]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
[2] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
 Excellent ruggedness
 High efficiency
 Low thermal resistance providing excellent thermal stability
 Designed for broadband operation (1800 MHz to 2050 MHz)
 Lower output capacitance for improved performance in Doherty applications
 Designed for low memory effects providing excellent pre-distortability
 Internally matched for ease of use
 Integrated ESD protection
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 RF power amplifiers for base stations and multi carrier applications in the 1800 MHz to
2050 MHz frequency range