BLF7G20LS-140P_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – Power LDMOS transistor

BLF7G20LS-140P
Power LDMOS transistor
Rev. 2 — 17 August 2010
Product data sheet
1. Product profile
1.1 General description
140 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1. Typical performance
Typical RF performance at T_case = 25 °C in a common source class-AB production test circuit.
Mode of operation
f
I_Dq
V_DS P_L(AV) G_p
η_D ACPR_400k
(MHz)
(mA) (V) (W) (dB) (%) (dBc)
CW
1805 to 1880 850 28 125 17 54 -
GSM EDGE
1805 to 1880 850 28 60
17.5 41 −61
ACPR_600k
(dBc)
-
−75
EVM_rms
(%)
-
2.7
1.2 Features and benefits
„ Excellent ruggedness
„ High efficiency
„ Low R_th providing excellent thermal stability
„ Designed for broadband operation (1800 MHz to 2000 MHz)
„ Lower output capacitance for improved performance in Doherty applications
„ Designed for low memory effects providing excellent pre-distortability
„ Internally matched for ease of use
„ Integrated ESD protection
„ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
„ RF power amplifiers for base stations and multi carrier applications in the 1800 MHz to
2000 MHz frequency range