BLF7G20L-90P_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – Power LDMOS transistor

BLF7G20L-90P;
BLF7G20LS-90P
Power LDMOS transistor
Rev. 2 — 20 October 2011
Product data sheet
1. Product profile
1.1 General description
90 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz, designed for operation at 1427 MHz to1525 MHz, 1805 MHz to
1880 MHz and 2110 MHz to 2170 MHz.
Table 1. Typical performance
Typical RF performance at T_case = 25 C in a common source class-AB production test circuit.
Mode of operation
f
I_Dq
V_DS P_L(AV) G_p
_D ACPR_400k
(MHz)
(mA) (V) (W) (dB) (%) (dBc)
CW
1805 to 1880 550 28 84
19 54 -
GSM EDGE
1805 to 1880 550 28 40
19.5 41 61
ACPR_600k
(dBc)
-
74
EVM_rms
(%)
-
2.5
1.2 Features and benefits
 Excellent ruggedness
 High efficiency
 Low R_th providing excellent thermal stability
 Designed for broadband operation (1427 MHz to1525 MHz, 1805 MHz to 1880 MHz
and 2110 MHz to 2170 MHz)
 Lower output capacitance for improved performance in Doherty applications
 Designed for low memory effects providing excellent pre-distortability
 Internally matched for ease of use
 Integrated ESD protection
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 RF power amplifiers for base stations and multi carrier applications in the frequency
bands of 1427 MHz to 1525 MHz, 1805 MHz to 1880 MHz and 2110 MHz to
2170 MHz.