BLF7G20L-200_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – Power LDMOS transistor

BLF7G20L-200;
BLF7G20LS-200
Power LDMOS transistor
Rev. 4 — 22 July 2011
Product data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for base station applications at frequencies from
1805 MHz to 1990 MHz.
Table 1. Typical performance
Typical RF performance at T_case = 25 C in a common source class-AB production test circuit.
Mode of operation
f
I_Dq
V_DS P_L(AV) G_p
_D ACPR
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
1805 to 1880
1620 28 55
18
33 29 ^[1]
[1] Test signal: 3GPP; test model 1; 64 PDPCH; PAR = 8.4 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
 Excellent ruggedness
 High efficiency
 Low R_th providing excellent thermal stability
 Designed for broadband operation (1805 MHz to 1990 MHz)
 Lower output capacitance for improved performance in Doherty applications
 Designed for low-memory effects providing excellent digital pre-distortion capability
 Internally matched for ease of use
 Integrated ESD protection
 Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
1.3 Applications
 RF power amplifiers for W-CDMA base stations and multi-carrier applications in the
1805 MHz to 1990 MHz frequency range