BLF7G10L-250_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – Power LDMOS transistor

BLF7G10L-250;
BLF7G10LS-250
Power LDMOS transistor
Rev. 4 — 13 September 2012
Product data sheet
1. Product profile
1.1 General description
250 W LDMOS power transistor for base station applications at frequencies from
869 MHz to 960 MHz.
Table 1. Typical performance
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier;
carrier spacing = 5 MHz. Typical RF performance at T_case = 25 C.
Test signal
f
I_Dq
V_DS P_L(AV) G_p
_D ACPR
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
869 to 894 ^[1]
1800 30 60
19.5 27.4 35.6
2-carrier W-CDMA
920 to 960 ^[2]
1800 30 60
19.5 30.5 34
[1] In a common source class-AB application test circuit.
[2] In a common source class-AB production test circuit.
1.2 Features and benefits
 Excellent ruggedness
 High efficiency
 Low R_th providing excellent thermal stability
 Designed for broadband operation (869 MHz to 960 MHz)
 Lower output capacitance for improved performance in Doherty applications
 Designed for low memory effects providing excellent pre-distortability
 Internally matched for ease of use (input and output)
 Integrated ESD protection
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 RF power amplifiers for W-CDMA base stations and multi carrier applications in the
869 MHz to 960 MHz frequency range