BLF6H10L-160_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – Power LDMOS transistor

BLF6H10L-160; BLF6H10LS-160
Power LDMOS transistor
Rev. 2 — 12 December 2012
Product data sheet
1. Product profile
1.1 General description
A 160 W LDMOS RF power transistor for base station applications. The transistor can
deliver 160 W from 729 MHz to 960 MHz. The excellent ruggedness and broadband
performance of this device makes it ideal for base station applications.
Table 1. Typical performance
RF performance at V_DS = 50 V in a common-source Class-AB test circuit.
Test signal
f
I_Dq
V_DS P_L(AV)
G_p
_D ACPR
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
960
600 50 38
20
34 32^[1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01% probability on CCDF.
1.2 Features and benefits
 Integrated ESD protection
 Excellent ruggedness
 High power gain
 High efficiency
 Excellent reliability
 Easy power control
 Low R_th providing excellent thermal stability
 Low output capacitance for wideband performance in Doherty applications
 Designed for low memory effects providing excellent digital pre-distortion capability
 No internal matching for broadband applications
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 RF power applications for GSM, GSM EDGE, W-CDMA, CDMA base stations and
multi carrier applications in the 729 MHz to 960 MHz frequency range