BLF6G38-25_15 Datasheet, PDF(1/14 Page) NXP Semiconductors

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BLF6G38-25_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – WiMAX power LDMOS transistor

BLF6G38-25; BLF6G38S-25

WiMAX power LDMOS transistor

Rev. 3 â 11 March 2013

Product data sheet

1. Product profile

1.1 General description

25 W LDMOS power transistor for base station applications at frequencies from

3400 MHz to 3800 MHz.

Table 1. Typical performance

Typical RF performance at Tcase = 25 ï°C in a class-AB production test circuit.

Mode of operation f

VDS PL(AV) Gp

ï¨D ACPR885k ACPR1980k

(MHz)

(V) (W) (dB) (%) (dBc)

(dBc)

1-carrier N-CDMA[1] 3400 to 3600 28 4.5

24 ï45[2]

ï61[2]

[1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at

0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.

[2] Measured within 30 kHz bandwidth.

1.2 Features and benefits

ï® Typical 1-carrier N-CDMA performance (single carrier IS-95 with pilot, paging, sync

and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on the

CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 3400 MHz, 3500 MHz

and 3600 MHz, a supply voltage of 28 V and an IDq of 225 mA:

ïµ Average output power = 4.5 W

ïµ Power gain = 15 dB

ïµ Drain efficiency = 24 %

ïµ ACPR885k = ï45 dBc in 30 kHz bandwidth

ï® Easy power control

ï® Integrated ESD protection

ï® Excellent ruggedness

ï® High efficiency

ï® Excellent thermal stability

ï® Designed for broadband operation (3400 MHz to 3800 MHz)

ï® Internally matched for ease of use

ï® Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

ï® RF power amplifiers for base stations and multicarrier applications in the

3400 MHz to 3800 MHz frequency range

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