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BLF6G38-10_15 Datasheet, PDF (1/16 Pages) NXP Semiconductors – WiMAX power LDMOS transistor | |||
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BLF6G38-10; BLF6G38-10G
WiMAX power LDMOS transistor
Rev. 2 â 6 January 2015
Product data sheet
1. Product profile
1.1 General description
10 W LDMOS power transistor for base station applications at frequencies from
3400 MHz to 3600 MHz.
Table 1. Typical performance
RF performance at Tcase = 25 ï°C in a class-AB production test circuit.
Mode of operation f
VDS PL(AV) Gp ï¨D ACPR885k
(MHz)
(V) (W) (dB) (%) (dBc)
1-carrier N-CDMA[1] 3400 to 3600 28 2
14 20 ï49[2]
ACPR1980k
(dBc)
ï64[2]
[1] Single carrier N-CDMA with pilot, paging sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz.
[2] Measured within 30 kHz bandwidth.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling. You must use a ground strap or touch the PC case or other
grounded source before unpacking or handling the hardware.
1.2 Features and benefits
ï® Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging,
sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on
CCDF. Channel bandwidth is 1.23 MHz), a supply voltage of 28 V and
an IDq of 130 mA:
ï® Qualified up to a maximum VDS operation of 32 V
ï® Integrated ESD protection
ï® Excellent ruggedness
ï® High efficiency
ï® Excellent thermal stability
ï® Designed for broadband operation
ï® Internally matched for ease of use
ï® Low gold plating thickness on leads
ï® Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
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