BLF6G22LS-100_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – Power LDMOS transistor

BLF6G22LS-100
Power LDMOS transistor
Rev. 3 — 12 November 2010
Product data sheet
1. Product profile
1.1 General description
100 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
Table 1. Typical performance
RF performance at T_case = 25 °C in a common source class-AB production test circuit.
Mode of operation f
V_DS P_L(AV)
G_p
η_D IMD3
(MHz)
(V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA 2110 to 2170 28 25
18.2 29 −37^[1]
ACPR
(dBc)
−41^[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 10 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
„ Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a
supply voltage of 28 V and an I_Dq of 950 mA:
‹ Average output power = 25 W
‹ Gain = 18.2 dB
‹ Efficiency = 29 %
‹ IMD3 = −37 dBc
‹ ACPR = −41 dBc
„ Easy power control
„ Integrated ESD protection
„ Excellent ruggedness
„ High efficiency
„ Excellent thermal stability
„ Designed for broadband operation (2000 MHz to 2200 MHz)
„ Internally matched for ease of use
„ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)