BLF6G22L-40P_15 Datasheet, PDF (1/16 Pages) NXP Semiconductors – Power LDMOS transistor

BLF6G22L-40P;
BLF6G22LS-40P
Power LDMOS transistor
Rev. 1 — 22 September 2011
Product data sheet
1. Product profile
1.1 General description
LDMOS power transistor for base station applications at frequencies from 2110 MHz to
2170 MHz and 1805 MHz to 1880 MHz.
Table 1. Typical performance
Typical RF performance at T_case = 25 C in a common source class-AB production test circuit.
Mode of operation
f
I_Dq
V_DS P_L(AV) G_p
_D ACPR
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
2110 to 2170
410 28
13.5 19
30 30 ^[2]
1805 to 1880 ^[1] 410 28 5
20.3 18.3 34.9 ^[2]
1-carrier W-CDMA
2110 to 2170 410 28 15
19
32 37 ^[3]
1805 to 1880 ^[1] 410 28 5
20.5 18.0 42.3 ^[3]
[1] The performance is tested on the Class AB demo board as depicted in Figure 11.
[2] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
[3] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
 Excellent ruggedness
 High efficiency
 Low R_th providing excellent thermal stability
 Lower output capacitance for improved performance in Doherty applications
 Designed for low memory effects providing excellent pre-distortability
 Internally matched for ease of use
 Integrated ESD protection
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 RF power amplifier for base stations and multi carrier applications in the 2110 MHz to
2170 MHz frequency band
 RF driver amplifier in the 1805 MHz to 1880 MHz frequency band