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BLF6G21-10G_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – Power LDMOS transistor | |||
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BLF6G21-10G
Power LDMOS transistor
Rev. 3 â 11 April 2013
Product data sheet
1. Product profile
1.1 General description
10 W LDMOS power transistor for base station applications at frequencies from
HF to 2200 MHz
Table 1. Typical performance
IDq = 100 mA; Tcase = 25 ï°C in a common source class-AB production test circuit.
Mode of operation f
VDS
PL(AV)
Gp
ï¨D
(MHz)
(V)
(W)
(dB)
(%)
2-carrier W-CDMA 2110 to 2170 28
0.7
18.5
15
1-carrier W-CDMA 2110 to 2170 28
2
19.3
31
ACPR
(dBc)
ï50[1]
ï39[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 5 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
ï® Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz,
a supply voltage of 28 V and an IDq of 100 mA:
ïµ Average output power = 0.7 W
ïµ Gain = 18.5 dB
ïµ Efficiency = 15 %
ïµ ACPR = ï50 dBc
ï® Typical 1-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz,
a supply voltage of 28 V and an IDq of 100 mA:
ïµ Average output power = 2 W
ïµ Gain = 19.3 dB
ïµ Efficiency = 31 %
ïµ ACPR = ï39 dBc
ï® Easy power control
ï® Integrated ESD protection
ï® Excellent ruggedness
ï® High efficiency
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