BLF6G20-45 Datasheet, PDF (1/8 Pages) NXP Semiconductors – UHF power LDMOS transistor

BLF6G20-45
UHF power LDMOS transistor
Rev. 01 — 20 February 2006
Objective data sheet
1. Product profile
1.1 General description
45 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1: Typical performance
RF performance at T_case = 25 °C in a common source class-AB production test circuit.
Mode of operation
f
V_DS
P_L(AV) G_p
η_D
(MHz)
(V)
(W) (dB) (%)
2-carrier W-CDMA
1805 to 1880
28
2.5
17
14
ACPR
(dBc)
−50 ^[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 5 MHz
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
s Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz, a
supply voltage of 28 V and an I_Dq of 350 mA:
x Average output power = 2.5 W
x Power gain = 17 dB (typ)
x Efficiency = 14 %
x ACPR = −50 dBc
s Easy power control
s Integrated ESD protection
s Excellent ruggedness
s High efficiency
s Excellent thermal stability
s Designed for broadband operation (1800 MHz to 2000 MHz)
s Internally matched for ease of use
1.3 Applications
s RF power amplifiers for W-CDMA base stations and multi carrier applications in the
1800 MHz to 2000 MHz frequency range.