BLF6G15LS-250PBRN_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – Power LDMOS transistor

BLF6G15LS-250PBRN
Power LDMOS transistor
Rev. 2 — 18 July 2012
Product data sheet
1. Product profile
1.1 General description
250 W LDMOS power transistor for base station applications at frequencies from
1450 MHz to 1550 MHz.
Table 1. Typical performance
Typical RF performance at T_case = 25 C in a class-AB production test circuit.
Mode of operation
f
V_DS
P_L(AV)
G_p
_D
(MHz)
(V) (W)
(dB) (%)
2-carrier W-CDMA
1476 to 1511 28 60
18.5 34.0
ACPR
(dBc)
30 ^[1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier.
Carrier spacing 5 MHz.
1.2 Features and benefits
 Typical 2-carrier W-CDMA performance at frequencies of 1476 MHz and 1511 MHz, a
supply voltage of 28 V and an I_Dq of 1410 mA:
 Average output power = 60 W
 Power gain = 18.5 dB
 Efficiency = 34.0 %
 ACPR = 30 dBc
 Easy power control
 Integrated ESD protection
 Enhanced ruggedness
 High efficiency
 Excellent thermal stability
 Designed for broadband operation (1450 MHz to 1550 MHz)
 Internally matched for ease of use
 Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
 Integrated current sense
1.3 Applications
 RF power amplifiers for GSM, GSM EDGE, CDMA and W-CDMA and multi carrier
applications in the 1450 MHz to 1550 MHz frequency range