BLF6G15L-500H_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – Power LDMOS transistor

BLF6G15L-500H;
BLF6G15LS-500H
Power LDMOS transistor
Rev. 3 — 12 July 2013
Product data sheet
1. Product profile
1.1 General description
A 500 W LDMOS RF power transistor for transmitter applications and industrial
applications. The transistor is optimized for digital applications and can deliver 65 W
average DVB-T at 1.5 GHz. The excellent ruggedness of this device makes it ideal for
digital transmitter applications.
Table 1. Test information
RF performance at V_DS = 50 V; I_Dq = 1.3 A.
Mode of operation
f
(MHz)
2-tone, class-AB
1452 to 1492
DVB-T (8k OFDM)
1452 to 1492
P_L(AV)
(W)
250
65
G_p _D IMD3
(dB) (%) (dBc)
15 34 24
16 19 -
IMD_shldr
(dBc)
-
32 ^[1]
PAR
(dB)
-
9 ^[2]
[1] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
[2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
1.2 Features and benefits
 Easy power control
 Integrated ESD protection
 Excellent ruggedness
 High efficiency
 Excellent thermal stability
 Internally matched for ease of use
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 Digital transmitter applications DVB at 1.5 GHz
 Industrial applications at 1.5 GHz