BLF6G15L-40RN_15 Datasheet, PDF(1/12 Page) NXP Semiconductors

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BLF6G15L-40RN_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – Power LDMOS transistor

BLF6G15L-40RN;

BLF6G15LS-40RN

Power LDMOS transistor

Rev. 2 â 14 May 2012

Product data sheet

1. Product profile

1.1 General description

40 W LDMOS power transistor for base station applications at frequencies from

1450 MHz to 1550 MHz.

Table 1. Typical performance

Typical RF performance at Tcase = 25 ï°C in a class-AB production test circuit.

Test signal

VDS

PL(AV)

ï¨D

(MHz)

(V) (W)

(dB) (%)

2-carrier W-CDMA

1476 to 1511 28 2.5

22.5 13.5

ACPR

(dBc)

ï45[1]

[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at probability of 0.01 % on CCDF carrier;

carrier spacing 5 MHz.

1.2 Features and benefits

ï® Typical 2-carrier W-CDMA performance at frequencies of 1476 MHz and 1511 MHz,

a supply voltage of 28 V and an IDq of 375 mA:

ïµ Average output power = 2.5 W

ïµ Power gain = 22.5 dB

ïµ Efficiency = 13.5 %

ïµ ACPR = ï45 dBc

ï® Easy power control

ï® Integrated ESD protection

ï® Enhanced ruggedness

ï® High efficiency

ï® Excellent thermal stability

ï® Designed for broadband operation (1450 MHz to 1550 MHz)

ï® Internally matched for ease of use

ï® Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC.

1.3 Applications

ï® RF power amplifiers for W-CDMA base stations and multi carrier applications in the

1450 MHz to 1550 MHz frequency range

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