BLF6G13L-250P_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – Power LDMOS transistor

BLF6G13L-250P;
BLF6G13LS-250P
Power LDMOS transistor
Rev. 3 — 14 October 2011
Product data sheet
1. Product profile
1.1 General description
250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz.
Table 1. Test information
Typical RF performance at T_case = 25 C; I_Dq = 100 mA; in a class-AB production test circuit.
Mode of operation
f
V_DS
P_L(1dB)
G_p
_D
(GHz)
(V)
(W)
(dB)
(%)
CW
1.3
50
250
17
56
1.2 Features and benefits
 Typical CW performance at a frequency of 1.3 GHz, a supply voltage of 50 V, an I_Dq of
100 mA:
 Output power = 250 W
 Power gain = 17 dB
 Efficiency = 56 %
 Easy power control
 Integrated ESD protection
 Excellent ruggedness
 High efficiency
 Excellent thermal stability
 Internally matched for ease of use
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 Industrial, scientific and medical applications