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BLF6G10L Datasheet, PDF (1/15 Pages) NXP Semiconductors – 260 W LDMOS power transistor for base station applications | |||
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BLF6G10L-260PRN;
BLF6G10LS-260PRN
Power LDMOS transistor
Rev. 2 â 12 July 2013
Product data sheet
1. Product profile
1.1 General description
260 W LDMOS power transistor for base station applications at frequencies from
700 MHz to 1000 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 ï°C in a class-AB production test circuit.
Mode of operation
f
VDS
PL(AV)
Gp
ï¨D
(MHz)
(V) (W)
(dB) (%)
2-carrier W-CDMA
920 to 960
28 40
22.0 26.5
ACPR
(dBc)
ï39[1]
[1] Test signal: 3GPP test model 1; 1 to 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 5 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
ï® Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a
supply voltage of 28 V and an IDq of 1800 mA:
ïµ Average output power = 40 W
ïµ Power gain = 22.0 dB
ïµ Efficiency = 26.5 %
ïµ ACPR = ï39 dBc
ï® Easy power control
ï® Integrated ESD protection
ï® Excellent ruggedness
ï® High efficiency
ï® Excellent thermal stability
ï® Designed for broadband operation (700 MHz to 1000 MHz)
ï® Internally matched for ease of use
ï® Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
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