BLF6G10L-260PRN_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – Power LDMOS transistor

BLF6G10L-260PRN;
BLF6G10LS-260PRN
Power LDMOS transistor
Rev. 2 — 12 July 2013
Product data sheet
1. Product profile
1.1 General description
260 W LDMOS power transistor for base station applications at frequencies from
700 MHz to 1000 MHz.
Table 1. Typical performance
Typical RF performance at T_case = 25 C in a class-AB production test circuit.
Mode of operation
f
V_DS
P_L(AV)
G_p
_D
(MHz)
(V) (W)
(dB) (%)
2-carrier W-CDMA
920 to 960
28 40
22.0 26.5
ACPR
(dBc)
39^[1]
[1] Test signal: 3GPP test model 1; 1 to 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 5 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
 Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a
supply voltage of 28 V and an I_Dq of 1800 mA:
 Average output power = 40 W
 Power gain = 22.0 dB
 Efficiency = 26.5 %
 ACPR = 39 dBc
 Easy power control
 Integrated ESD protection
 Excellent ruggedness
 High efficiency
 Excellent thermal stability
 Designed for broadband operation (700 MHz to 1000 MHz)
 Internally matched for ease of use
 Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC