BLF6G10-45_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – Power LDMOS transistor

BLF6G10-45
Power LDMOS transistor
Rev. 3 — 11 March 2013
Product data sheet
1. Product profile
1.1 General description
45 W LDMOS power transistor for base station applications at frequencies from 700 MHz
to 1000 MHz.
Table 1. Typical performance
RF performance at T_case = 25 C in a common source class-AB production test circuit.
Mode of operation
f
V_DS
P_L(AV) G_p
_D
(MHz)
(V)
(W) (dB) (%)
2-carrier W-CDMA
920 to 960
28
1.0
22.5 7.8
ACPR
(dBc)
48.5^[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 5 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
 Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a
supply voltage of 28 V and an I_Dq of 350 mA:
 Average output power = 1.0 W
 Gain = 22.5 dB
 Efficiency = 7.8 %
 ACPR = 48.5 dBc
 Easy power control
 Integrated ESD protection
 Excellent ruggedness
 High efficiency
 Excellent thermal stability
 Designed for broadband operation (700 MHz to 1000 MHz)
 Internally matched for ease of use
 Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)