BLF6G10-135RN_15 Datasheet, PDF (1/11 Pages) NXP Semiconductors – Power LDMOS transistor

BLF6G10-135RN;
BLF6G10LS-135RN
Power LDMOS transistor
Rev. 02 — 21 January 2010
Product data sheet
1. Product profile
1.1 General description
135 W LDMOS power transistor for base station applications at frequencies from
700 MHz to 1000 MHz.
Table 1. Typical performance
Typical RF performance at T_case = 25 °C in a class-AB production test circuit.
Mode of operation
f
V_DS
P_L(AV)
G_p
η_D
(MHz)
(V) (W)
(dB) (%)
2-carrier W-CDMA
869 to 894
28 26.5
21.0 28.0
ACPR
(dBc)
−39^[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 5 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
„ Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a
supply voltage of 28 V and an I_Dq of 950 mA:
‹ Average output power = 26.5 W
‹ Power gain = 21.0 dB
‹ Efficiency = 28.0 %
‹ ACPR = −39 dBc
„ Easy power control
„ Integrated ESD protection
„ Enhanced ruggedness
„ High efficiency
„ Excellent thermal stability
„ Designed for broadband operation (700 MHz to 1000 MHz)
„ Internally matched for ease of use
„ Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)