BLF647PS_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – Broadband power LDMOS transistor

BLF647PS
Broadband power LDMOS transistor
Rev. 2 — 18 November 2013
Product data sheet
1. Product profile
1.1 General description
A 200 W LDMOS RF power transistor for broadcast transmitter and industrial
applications. The transistor is suitable for the frequency range HF to 1500 MHz. The
excellent ruggedness and broadband performance of this device makes it ideal for digital
applications.
Table 1. Application information
RF performance at T_h = 25 C in a common source test circuit.
Test signal
f
V_DS I_Dq P_L(AV)
(MHz)
(V) (A) (W)
Pulsed, class-B 1300
32 0.1 -
CW, class-B
1300
32 0.1 200
2-tone, class-AB f₁ = 1299.95; f₂ = 1300.05 32 0.7 75
P_L(M)
(W)
200
-
-
G_p
(dB)
17.5
17.5
19
_D IMD3
(%) (dBc)
70 -
70 -
48 33
1.2 Features and benefits
 Integrated ESD protection
 Excellent ruggedness
 High power gain
 High efficiency
 Excellent reliability
 Easy power control
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 Communication transmitter applications in the HF to 1500 MHz frequency range
 Industrial applications in the HF to 1500 MHz frequency range