BLF644P_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – Broadband power LDMOS transistor

BLF644P
Broadband power LDMOS transistor
Rev. 2 — 27 June 2014
Product data sheet
1. Product profile
1.1 General description
A 70 W LDMOS RF power transistor for broadcast transmitter, communications and
industrial applications. The transistor is suitable for the frequency range HF to 1300 MHz.
The excellent ruggedness and broadband performance of this device makes it ideal for
digital applications.
Table 1. Typical performance
RF performance at T_case = 25 C in a common source test circuit.
Test signal
f
V_DS
P_L
(MHz)
(V)
(W)
CW, class-A
860
32
100
CW pulsed, class-AB
860
32
100
2-tone, class-AB
860
32
45
860
32
30
G_p
(dB)
23
23.5
23
24
_D
IMD
(%) (dBc)
65
-
66
-
50
25
40
35
1.2 Features and benefits
 Integrated ESD protection
 Excellent ruggedness
 High power gain
 High efficiency
 Excellent reliability
 Easy power control
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 Communication transmitter applications in the HF to 1300 MHz frequency range
 Industrial applications in the HF to 1300 MHz frequency range
 Broadcast transmitters