BLF642_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – Broadband power LDMOS transistor

BLF642
Broadband power LDMOS transistor
Rev. 2 — 22 July 2011
Product data sheet
1. Product profile
1.1 General description
A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications.
The transistor is suitable for the frequency range HF to 1400 MHz. The excellent
ruggedness and broadband performance of this device makes it ideal for digital
applications.
Table 1. Typical performance
RF performance at T_h = 25 C in a common source test circuit.
Mode of operation
f
V_DS
P_L
(MHz)
(V)
(W)
CW, class-AB
1300
32
35
2-tone, class-AB
1300
32
17.5
G_p
(dB)
19
19
_D
IMD
(%) (dBc)
63
-
48
28
1.2 Features and benefits
 CW performance at 1300 MHz, a drain-source voltage V_DS of 32 V and a quiescent
drain current I_Dq = 0.2 A :
 Average output power = 35 W
 Power gain = 19 dB
 Drain efficiency = 63 %
 2-tone performance at 1300 MHz, a drain-source voltage V_DS of 32 V and a quiescent
drain current I_Dq = 0.2 A :
 Average output power = 17.5 W
 Power gain = 19 dB
 Drain efficiency = 48 %
 Intermodulation distortion = 28 dBc
 Integrated ESD protection
 Excellent ruggedness
 High power gain
 High efficiency
 Excellent reliability
 Easy power control
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)