BLF640_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – Broadband power LDMOS transistor

BLF640
Broadband power LDMOS transistor
Rev. 2 — 11 April 2013
Product data sheet
1. Product profile
1.1 General description
10 W LDMOS power transistor for applications at frequencies from HF to 2200 MHz
Table 1. Typical performance
I_Dq = 100 mA; T_case = 25 C in a common source class-AB production test circuit.
Test signal
f
V_DS
P_L(AV)
G_p
_D
(MHz)
(V)
(W)
(dB)
(%)
2-carrier W-CDMA 2110 to 2170 28
0.7
18.5
15
1-carrier W-CDMA 2110 to 2170 28
2
19.3
31
ACPR
(dBc)
50 ^[1]
39 ^[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 5 MHz.
1.2 Features and benefits
 Easy power control
 Integrated ESD protection
 Excellent ruggedness
 High efficiency
 Excellent thermal stability
 No internal matching for broadband operation
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 RF power amplifiers for applications in the HF to 2200 MHz frequency range
 Broadcast drivers