BLF578_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – Power LDMOS transistor

BLF578
Power LDMOS transistor
Rev. 02 — 4 February 2010
Product data sheet
1. Product profile
1.1 General description
A 1200 W LDMOS power transistor for broadcast applications and industrial applications
in the HF to 500 MHz band.
Table 1. Application information
Mode of operation
CW
pulsed RF
f
(MHz)
108
225
V_DS
P_L
(V)
(W)
G_p
η_D
(dB)
(%)
50
1000
26
75
50
1200
24
71
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
„ Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an
I_Dq of 40 mA, a t_p of 100 μs with δ of 20 %:
‹ Output power = 1200 W
‹ Power gain = 24 dB
‹ Efficiency = 71 %
„ Easy power control
„ Integrated ESD protection
„ Excellent ruggedness
„ High efficiency
„ Excellent thermal stability
„ Designed for broadband operation (10 MHz to 500 MHz)
„ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
„ Industrial, scientific and medical applications
„ Broadcast transmitter applications