BLF578XR_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – Power LDMOS transistor

BLF578XR; BLF578XRS
Power LDMOS transistor
Rev. 4 — 12 July 2013
Product data sheet
1. Product profile
1.1 General description
A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial
applications in the HF to 500 MHz band. This product is an enhanced version of the
BLF578 using NXP's XR process to provide maximum ruggedness capability in the most
severe applications without compromising the RF performance.
Table 1. Application information
Test signal
pulsed RF
f
(MHz)
225
V_DS
P_L
G_p
_D
(V)
(W)
(dB)
(%)
50
1400
23.5
69
1.2 Features and benefits
 Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an
I_Dq of 40 mA, a t_p of 100 s with  of 20 %:
 Output power = 1400 W
 Power gain = 23.5 dB
 Efficiency = 69 %
 Easy power control
 Integrated ESD protection
 Excellent ruggedness
 High efficiency
 Excellent thermal stability
 Designed for broadband operation (HF to 500 MHz)
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 Industrial, scientific and medical applications
 Broadcast transmitter applications