BLF573_BLF573S_15 Datasheet, PDF (1/16 Pages) NXP Semiconductors – HF / VHF power LDMOS transistor

BLF573; BLF573S
HF / VHF power LDMOS transistor
Rev. 3 — 8 July 2010
Product data sheet
1. Product profile
1.1 General description
A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific
and medical applications in the HF to 500 MHz band.
Table 1. Production test information
Mode of operation f
V_DS
P_L
G_p
η_D
(MHz)
(V)
(W)
(dB)
(%)
CW
225
50
300
27.2
70
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
„ Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an
I_Dq of 900 mA:
‹ Average output power = 300 W
‹ Power gain = 27.2 dB
‹ Efficiency = 70 %
„ Easy power control
„ Integrated ESD protection
„ Excellent ruggedness
„ High efficiency
„ Excellent thermal stability
„ Designed for broadband operation (HF and VHF band)
„ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
„ Industrial, scientific and medical applications
„ Broadcast transmitter applications