BLF4G10-120 Datasheet, PDF (1/14 Pages) NXP Semiconductors – UHF power LDMOS transistor

BLF4G10-120; BLF4G10S-120
UHF power LDMOS transistor
Rev. 01 — 10 January 2006
Product data sheet
1. Product profile
1.1 General description
120 W LDMOS power transistor for base station applications at frequencies from
800 MHz to 1000 MHz.
Table 1: Typical performance
RF performance at T_h = 25 °C in a common base class-AB test circuit.
Mode of f
operation (MHz)
V_DS P_L
(V) (W)
G_p η_D ACPR₄₀₀ ACPR₆₀₀
(dB) (%) (dBc) (dBc)
(typ)
(typ)
(typ)
EVM_rms IMD3
(%)
(dBc)
(typ)
CW
861 to 961 28 120
19 57 -
-
-
-
GSM EDGE 861 to 961 28 48 (AV) 19 40 −61 ^[1] −72 ^[2] 1.5
-
2-tone
861 to 961 28 120 (PEP) 19 46 -
-
-
−31
[1] ACPR₄₀₀ at 30 kHz resolution bandwidth
[2] ACPR₆₀₀ at 30 kHz resolution bandwidth
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
s Typical GSM EDGE performance at frequency of 960 MHz, a supply voltage of 28 V
and an I_Dq of 850 mA:
x Load power = 48 W (AV)
x Gain = 19 dB (typ)
x Efficiency = 40 % (typ)
x ACPR₄₀₀ = −61 dBc (typ)
x ACPR₆₀₀ = −72 dBc (typ)
x EVM_rms = 1.5 % (typ)
s Easy power control
s Excellent ruggedness
s High efficiency
s Excellent thermal stability
s Designed for broadband operation (800 MHz to 1000 MHz)
s Internally matched for ease of use