BLF2425M9L30_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – Power LDMOS transistor

BLF2425M9L30;
BLF2425M9LS30
Power LDMOS transistor
Rev. 1 — 3 June 2015
Objective data sheet
1. Product profile
1.1 General description
30 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at
frequencies from 2400 MHz to 2500 MHz.
The BLF2425M9L30 and BLF2425M9LS30 are drivers designed for high power CW
applications and are assembled in a high performance ceramic package.
Table 1. Typical performance
RF performance at T_case = 25 C in a common source class-AB production test circuit.
Test signal
f
V_DS
P_L(AV)
G_p
_D
(MHz)
(V)
(W)
(dB)
(%)
CW
2450
32
30
18.5
61
1.2 Features and benefits
 High efficiency
 High power gain
 Excellent ruggedness
 Excellent thermal stability
 Integrated ESD protection
 Designed for broadband operation (2400 MHz to 2500 MHz)
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 Industrial, scientific and medical applications in the frequency range from 2400 MHz to
2500 MHz