BLF2425M7L250P_15 Datasheet, PDF (1/11 Pages) NXP Semiconductors – Power LDMOS transistor

BLF2425M7L250P;
BLF2425M7LS250P
Power LDMOS transistor
Rev. 4 — 12 July 2013
Product data sheet
1. Product profile
1.1 General description
250 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at
frequencies from 2400 MHz to 2500 MHz.
The BLF2425M7L250P and BLF2425M7LS250P are designed for high-power CW
applications and are assembled in high performance ceramic packages, available in
eared and earless versions
Table 1. Typical performance
RF performance at T_case = 25 C in a common source class-AB production test circuit.
Test signal
f
V_DS
P_L(AV)
G_p
_D
(MHz)
(V)
(W)
(dB)
(%)
CW
2450
28
250
15
51
1.2 Features and benefits
 High efficiency
 Easy power control
 Excellent ruggedness
 Excellent thermal stability
 Integrated ESD protection
 Designed for broadband operation (2400 MHz to 2500 MHz)
 Internally matched
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 RF power amplifiers for CW applications in the 2400 MHz to 2500 MHz frequency
range such as ISM and industrial heating.