BLF2425M7L140_15 Datasheet, PDF (1/11 Pages) NXP Semiconductors – Power LDMOS transistor

BLF2425M7L140;
BLF2425M7LS140
Power LDMOS transistor
Rev. 3 — 6 September 2012
Product data sheet
1. Product profile
1.1 General description
140 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at
frequencies from 2400 MHz to 2500 MHz.
The BLF2425M7L140 and BLF2425M7LS140 are designed for high-power CW
applications and are assembled in high performance ceramic packages, available in
eared and earless versions
Table 1. Typical performance
Typical RF performance at T_case = 25 C; I_Dq = 1300 mA in a common source class-AB production
test circuit.
Test signal
f
(MHz)
V_DS
P_L(AV)
(V)
(W)
G_p
_D
(dB)
(%)
CW
2450
28
140
18.5
52
1.2 Features and benefits
 High efficiency
 High power gain
 Excellent ruggedness
 Excellent thermal stability
 Integrated ESD protection
 Designed for broadband operation (2400 MHz to 2500 MHz)
 Internally matched
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 Industrial, scientific and medical applications in the frequency range from 2400 MHz to
2500 MHz