BLF2425M6L180P_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – Power LDMOS transistor

BLF2425M6L180P;
BLF2425M6LS180P
Power LDMOS transistor
Rev. 3 — 12 July 2013
Product data sheet
1. Product profile
1.1 General description
180 W LDMOS power transistor for various applications such as ISM and industrial
heating at frequencies from 2400 MHz to 2500 MHz.
Table 1. Typical performance
RF performance at T_case = 25 C in a common source class-AB production test circuit.
Test signal
f
I_Dq
V_DS
P_L(AV)
G_p
(MHz)
(mA)
(V)
(W)
(dB)
CW
2450
10
28
180
13.3
_D
(%)
53.5
1.2 Features and benefits
 Easy power control
 Integrated ESD protection
 High efficiency
 Excellent thermal stability
 Designed for broadband operation (2400 MHz to 2500 MHz)
 Internally matched for ease of use
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 RF power amplifiers for CW applications in the 2400 MHz to 2500 MHz frequency
range such as ISM and industrial heating.