BLF188XR_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – Power LDMOS transistor

BLF188XR; BLF188XRS
Power LDMOS transistor
Rev. 5 — 12 November 2013
Product data sheet
1. Product profile
1.1 General description
A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial
applications in the HF to 600 MHz band.
Table 1. Application information
Test signal
f
(MHz)
CW
2 to 30
27
41
60
72.5
81.4
88 to 108
108
200
pulsed RF
81.4
81.4
108
DVB-T
174 to 230
V_DS
P_L
(V)
(W)
50
1270
50
1400
50
1200
48
1240
50
1350
50
1200
50
1320
50
1200
50
1288
50
1200
50
1400
50
1400
50
225
G_p
_D
(dB)
(%)
29.0
75
23.7
73
22.0
82
22.0
77
23.1
83
27.1
77.8
22.5
85
26.5
83
19.3
68.3
25.8
85
25.4
81
24.0
73
23.8
29
1.2 Features and benefits
 Easy power control
 Integrated ESD protection
 Excellent ruggedness
 High efficiency
 Excellent thermal stability
 Designed for broadband operation (HF to 600 MHz)
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 Industrial, scientific and medical applications
 Broadcast transmitter applications