BLF188XRG_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – Power LDMOS transistor

BLF188XRG
Power LDMOS transistor
Rev. 1 — 30 June 2014
Product data sheet
1. Product profile
1.1 General description
A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial
applications in the HF to 600 MHz band.
Table 1. Application information
Test signal
f
(MHz)
CW
108
pulsed RF
108
pulsed RF
81.4
V_DS
P_L
(V)
(W)
50
1200
50
1400
50
1200
G_p
_D
(dB)
(%)
26.5
83
28
72
25.8
85
1.2 Features and benefits
 Easy power control
 Integrated ESD protection
 Excellent ruggedness
 High efficiency
 Excellent thermal stability
 Designed for broadband operation (HF to 600 MHz)
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 Industrial, scientific and medical applications
 Broadcast transmitter applications