BLF183XR_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – Power LDMOS transistor

BLF183XR; BLF183XRS
Power LDMOS transistor
Rev. 2 — 22 May 2015
Product data sheet
1. Product profile
1.1 General description
A 350 W extremely rugged LDMOS power transistor for broadcast and industrial
applications in the HF to 600 MHz band.
Table 1. Application information
Test signal
f
(MHz)
V_DS
P_L
(V)
(W)
pulsed RF
108
50
350
CW
88 to 108
50
388
pulsed RF
30 to 512
50
400
CW
30 to 512
35
193
G_p
_D
(dB)
(%)
28
75
26
80
15
48
14
47
1.2 Features and benefits
 Easy power control
 Integrated ESD protection
 Excellent ruggedness
 High efficiency
 Excellent thermal stability
 Designed for broadband operation (HF to 600 MHz)
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 Industrial, scientific and medical applications
 Broadcast transmitter applications