BLF178XR112 Datasheet, PDF (1/14 Pages) NXP Semiconductors – Power LDMOS transistor

BLF178XR; BLF178XRS
Power LDMOS transistor
Rev. 4 — 12 July 2013
Product data sheet
1. Product profile
1.1 General description
A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial
applications in the HF to 128 MHz band.
Table 1. Application information
Test signal
CW
pulsed RF
f
(MHz)
108
108
V_DS
P_L
(V)
(W)
G_p
_D
(dB)
(%)
50
1200
23
80
50
1400
28
72
1.2 Features and benefits
 Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an
I_Dq of 40 mA, a t_p of 100 s with  of 20 %:
 Output power = 1400 W
 Power gain = 28 dB
 Efficiency = 72 %
 Easy power control
 Integrated ESD protection
 Excellent ruggedness
 High efficiency
 Excellent thermal stability
 Designed for broadband operation (HF to 128 MHz)
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 Industrial, scientific and medical applications
 Broadcast transmitter applications