BLF178P_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – Power LDMOS transistor

BLF178P
Power LDMOS transistor
Rev. 2 — 16 February 2012
Product data sheet
1. Product profile
1.1 General description
A 1200 W LDMOS power transistor for broadcast applications and industrial applications
in the HF to 110 MHz band.
Table 1. Application information
Test signal
CW
pulsed RF
f
(MHz)
108
108
V_DS
P_L
(V)
(W)
G_p
_D
(dB)
(%)
50
1000
26
75
50
1200
28.5
75
1.2 Features and benefits
 Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an
I_Dq of 40 mA, a t_p of 100 s with  of 20 %:
 Output power = 1200 W
 Power gain = 28.5 dB
 Efficiency = 75 %
 Easy power control
 Integrated ESD protection
 Excellent ruggedness
 High efficiency
 Excellent thermal stability
 Designed for broadband operation (10 MHz to 110 MHz)
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 Industrial, scientific and medical applications
 FM transmitter applications