BLF174XR_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – Power LDMOS transistor

BLF174XR; BLF174XRS
Power LDMOS transistor
Rev. 1 — 25 June 2013
Product data sheet
1. Product profile
1.1 General description
A 600 W extremely rugged LDMOS power transistor for broadcast and industrial
applications in the HF to 128 MHz band.
Table 1. Application information
Test signal
f
(MHz)
CW
108
pulsed RF
108
V_DS
P_L
G_p
_D
(V)
(W)
(dB)
(%)
50
600
28.5
74
50
600
29
73
1.2 Features and benefits
 Easy power control
 Integrated ESD protection
 Excellent ruggedness
 High efficiency
 Excellent thermal stability
 Designed for broadband operation (HF to 128 MHz)
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 Industrial, scientific and medical applications
 Broadcast transmitter applications