BLF10M6200_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – Power LDMOS transistor

BLF10M6200; BLF10M6LS200
Power LDMOS transistor
Rev. 1 — 1 July 2013
Product data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for ISM applications at frequencies from 700 MHz to
1000 MHz.
Table 1. Typical performance
Typical RF performance at T_case = 25 C in a common source class-AB production test circuit.
Test signal
f
V_DS
P_L(AV)
G_p
_D
ACPR
(MHz)
(V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
869 to 894
28 40
20
28.5 39^[1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 5 MHz.
1.2 Features and benefits
 Easy power control
 Integrated ESD protection
 Excellent ruggedness
 High efficiency
 Excellent thermal stability
 Designed for broadband operation (700 MHz to 1000 MHz)
 Internally matched for ease of use
 Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1.3 Applications
 RF power amplifiers for ISM applications in the 700 MHz to 1000 MHz frequency
range.