BLF10M6135_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – Power LDMOS transistor

BLF10M6135; BLF10M6LS135
Power LDMOS transistor
Rev. 1 — 24 June 2014
Product data sheet
1. Product profile
1.1 General description
135 W LDMOS power transistor for industrial applications at frequencies from 700 MHz to
1000 MHz.
Table 1. Typical performance
Typical RF performance at T_case = 25 C in a class-AB production test circuit.
Test signal
f
V_DS
P_L(AV)
G_p
_D
(MHz)
(V) (W)
(dB) (%)
2-carrier W-CDMA
869 to 894
28 26.5
21.0 28.0
ACPR
(dBc)
39^[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 5 MHz.
1.2 Features and benefits
 Easy power control
 Integrated ESD protection
 Enhanced ruggedness
 High efficiency
 Excellent thermal stability
 Designed for broadband operation (700 MHz to 1000 MHz)
 Internally matched for ease of use
 Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1.3 Applications
 RF power amplifiers for ISM applications in the 700 MHz to 1000 MHz frequency range