BLC9G20LS-120V_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – Power LDMOS transistor

BLC9G20LS-120V
Power LDMOS transistor
Rev. 1 — 3 July 2015
Objective data sheet
1. Product profile
1.1 General description
120 W LDMOS power transistor with improved video bandwidth for base station
applications at frequencies from 1805 MHz to 1995 MHz.
Table 1. Typical performance
Typical RF performance at T_case = 25 C in a common source class-AB production test circuit.
Test signal
f
I_Dq
V_DS P_L(AV) G_p
_D
ACPR_5M
(MHz)
(mA) (V) (W)
(dB) (%)
(dBc)
2-carrier W-CDMA
1805 to 1880 700 28 30
19.2 31
33 ^[1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF per carrier;
5 MHz carrier spacing.
1.2 Features and benefits
 Excellent ruggedness
 High efficiency
 Low thermal resistance providing excellent thermal stability
 Decoupling leads to enable improved video bandwidth performance (75 MHz typical)
 Designed for broadband operation (1805 MHz to 1995 MHz)
 Lower output capacitance for improved performance in Doherty applications
 Designed for low memory effects providing excellent pre-distortability
 Internally matched for ease of use
 Integrated ESD protection
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 RF power amplifiers for base stations and multi carrier applications in the
1805 MHz to 1995 MHz frequency range