BLC8G27LS-180AV_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – Power LDMOS transistor

BLC8G27LS-180AV
Power LDMOS transistor
Rev. 2 — 9 February 2015
Product data sheet
1. Product profile
1.1 General description
180 W LDMOS packaged asymmetrical Doherty power transistor for base station
applications at frequencies from 2496 MHz to 2690 MHz.
Table 1. Typical performance
Typical RF performance at T_case = 25 C in a Doherty production test circuit.
Test signal
f
V_DS
P_L(AV)
G_p
(MHz)
(V) (W)
(dB)
1-carrier W-CDMA
2496 to 2690 28 28
14
_D
(%)
43.5
ACPR
(dBc)
30 ^[1]
[1] Test signal: 3GPP test model 1; 1 to 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
 High efficiency
 Excellent ruggedness
 Designed for broadband operation
 Low thermal resistance providing excellent thermal stability
 Integrated ESD protection
 Designed for low memory effects providing excellent pre-distortability
 Lower output capacitance for improved performance in Doherty applications
 Asymmetrical design to achieve optimal efficiency across the band
 Decoupling leads to enable improved video bandwidth
 Internally matched for ease of use (input and output)
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 RF power amplifier for W-CDMA base stations and multi carrier applications in the
2496 MHz to 2690 MHz frequency range