|
BLC8G27LS-140AV_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – Power LDMOS transistor | |||
|
BLC8G27LS-140AV
Power LDMOS transistor
Rev. 1 â 6 November 2014
Product data sheet
1. Product profile
1.1 General description
140 W LDMOS packaged asymmetrical Doherty power transistor for base station
applications at frequencies from 2496 MHz to 2690 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 ï°C in a Doherty demo board.
Test signal
f
VDS
PL(AV)
Gp
ï¨D
(MHz)
(V) (W)
(dB) (%)
1-carrier W-CDMA
2496 to 2690 28 28
15
46
ACPR
(dBc)
ï30 [1]
[1] Test signal: 3GPP test model 1; 1 to 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
ï® Excellent ruggedness
ï® High efficiency
ï® Low thermal resistance providing excellent thermal stability
ï® Decoupling leads to enable improved video bandwidth
ï® Lower output capacitance for improved performance in Doherty applications
ï® Designed for low memory effects providing excellent pre-distortability
ï® Internally matched for ease of use
ï® Integrated ESD protection
ï® Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
1.3 Applications
ï® RF power amplifier for LTE base stations and multi carrier applications in the
2496 MHz to 2690 MHz frequency range
|
▷ |