BLC8G24LS-240AV_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – Power LDMOS transistor

BLC8G24LS-240AV
Power LDMOS transistor
Rev. 3 — 28 July 2015
Product data sheet
1. Product profile
1.1 General description
240 W LDMOS packaged asymmetric Doherty power transistor for base station
applications at frequencies from 2300 MHz to 2400 MHz.
Table 1. Typical performance
Typical RF performance at T_case = 25 C in an asymmetrical Doherty production test circuit.
V_DS = 28 V; I_Dq = 500 mA (main); V_GS(amp)peak = 0.30 V, unless otherwise specified.
Test signal
f
V_DS P_L(AV)
G_p
_D ACPR
(MHz)
(V) (W)
(dB) (%) (dBc)
1-carrier W-CDMA
2300 to 2400
28 56
15
44 29 ^[1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01% probability on CCDF per carrier.
1.2 Features and benefits
 Excellent ruggedness
 High-efficiency
 Low thermal resistance providing excellent thermal stability
 Designed for broadband operation (2300 MHz to 2400 MHz)
 Asymmetric design to achieve optimum efficiency across the band
 Lower output capacitance for improved performance in Doherty applications
 Designed for low memory effects providing excellent digital pre-distortion capability
 Internally matched for ease of use
 Integrated ESD protection
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 RF power amplifiers for base stations and multi carrier applications in the 2300 MHz to
2400 MHz frequency range