BLC8G21LS-160AV_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – Power LDMOS transistor

BLC8G21LS-160AV
Power LDMOS transistor
Rev. 1 — 12 August 2014
Product data sheet
1. Product profile
1.1 General description
160 W LDMOS transistor for base station applications at frequencies from 1805 MHz to
2025 MHz.
Table 1. Typical performance
Typical RF performance at T_case = 25 C in a Doherty demo board.
Test signal
f
I_Dq
V_DS P_L(AV)
(MHz)
(mA) (V) (W)
1-carrier W-CDMA
1805 to 1880
350 28 22
1-carrier W-CDMA
1880 to 2025
350 28 22
G_p _D ACPR
(dB) (%) (dBc)
16
49 30 ^[1]
15.5 47 30 ^[1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
 Designed for broadband operation (1805 MHz to 2025 MHz)
 Decoupling leads to enable improved video bandwidth
 Excellent ruggedness
 High efficiency
 Excellent thermal stability
 Internally matched for ease of use
 High power gain
 Integrated ESD protection
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 RF power amplifiers for base station and multi-carrier applications in the 1805 MHz to
2025 MHz frequency range